Beilstein J. Nanotechnol.2017,8, 514–521, doi:10.3762/bjnano.8.55
the distance between the valence band edge and the Fermi level energy. This was attributed to oxygen diffusion through the porous SnO2 surface as measured by atomic force microscopy.
Keywords: Fermi level position; RGVOnanolayers; rheotaxial growth and vacuum oxidation (RGVO); surface chemistry; tin
relative (Sn4+/Sn2+ + Sn0) concentration increased. It shows that the in situ RGVOnanolayers consists of a mixture of SnO and SnO2 with only weak domination of the latter one. This is in good agreement with the decomposition of the XPS O1s line (Figure 2b) in which the (O-Sn4+/O-Sn2+) ratio is 1.05.
After
an increase of the water and carbon contaminations, which were in their majority desorbed during UHV annealing. Hence, our studies proved that the SnO2 nanolayers are not susceptible to significant air-induced contaminations.
Moreover, the electronic properties of RGVOnanolayers were changed upon
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Figure 1:
XPS survey spectra with the main core-level lines of RGVO SnO2 nanolayers (pristine (“in situ”), af...